2009. 8. 17 1/4 semiconductor technical data kma3d0n20sa n-ch trench mosfet revision no : 2 general description this trench mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for portable equipment. features h v dss =20v, i d =3a h drain to source on-state resistance r ds(on) =55m ? (max.) @ v gs =4.5v r ds(on) =110m ? (max.) @ v gs =2.5v h super hige dense cell design maximum rating (ta=25 ? ) dim millimeters sot-23 a b c d e 2.93 0.20 1.30+0.20/-0.15 0.40+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 q 0.1 max 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p7 + _ q note1) surface mounted on 1 u ? 1 u fr4 board, t ? 5sec. pin connection (top view) characteristic symbol n-ch unit drain to source voltage v dss 20 v gate to source voltage v gss ? 12 v drain current dc@t a =25 ? (note1) i d 3 a pulsed (note1) i dp 12 drain power dissipation t a =25 ? (note1) p d 1.25 w t a =70 ? (note1) 0.8 maximum junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? thermal resistance, junction to ambient (note1) r thja 100 ? /w 2 3 1 gs d 1 2 3 knb
2009. 8. 17 2/4 kma3d0n20sa revision no : 2 electrical characteristics (ta=25 ? ) characteristic symbol test condition min. typ. max. unit static drain to source breakdown voltage bv dss i ds =250 a, v gs =0v, 20 - - v drain cut-off current i dss v gs =0v, v ds =16v - - 1 a gate to source leakage current i gss v gs = ? 10v, v ds =0v - - ? 100 na gate to source threshold voltage v th v ds =v gs, i d =250 a 0.5 0.8 1.5 v drain to source on resistance r ds(on) v gs =4.5v, i d =2.5a (note2) - 38 55 m ? v gs =2.5v, i d =1a (note2) - 55 110 on state drain current i d(on) v gs =4.5v, v ds =5v (note2) 12 - - a forward transconductance g fs v ds =5v, i d =2.5a (note2) - 6 - s dynamic input capaclitance c iss v ds =10v, v gs = 0v, f=1mhz - 280 - pf ouput capacitance c oss - 64 - reverse transfer capacitance c rss - 34 - total gate charge q g v ds =10v, v gs =4.5v, i d =2.5a (note2) - 4.0 - nc gate to source charge q gs - 0.9 - gate to drain charge q gd - 0.9 - turn-on delay time t d(on) v dd =10v, v gs =4.5v i d =1a, r g =6 ? (note2) - 6.3 - ns turn-on rise time t r - 7.0 - turn-off delay time t d(off) - 7.3 - turn-off fall time t f - 6.2 - source-drain diode ratings continuous source current i s - - - 3.0 a pulsed source current i sp - (note2) - - 12 a source to drain forward voltage v sdf v gs =0v, i s =1.25a - - 1.2 v note 2) pulse test : pulse width <300 k , duty cycle < 2%
2009. 8. 17 3/4 kma3d0n20sa revision no : 2
2009. 8. 17 4/4 kma3d0n20sa revision no : 2
|
